Anti-Reflective CoatingsVia Printing Application - All ARC®28 Anti-Reflective CoatingARC28 anti-reflective coating is specifically formulated to perform with the emerging ArF photoresists. This first minimum material has demonstrated broad resist compatibility with leading photoresists.
ARC®29A Anti-Reflective CoatingARC29A is a leading anti-reflective coating for 193nm photolithography. This second minimum material is compatible with a broad range of ArF photoresists. It is available in formulations for 200mm and 300mm processes.
ARC®82A Anti-Reflective CoatingARC82A is a leading-edge 193nm anti-reflective coating designed for improved depth of focus with advanced ArF photoresists. This second minimum BARC is compatible with FujiFilm, JSR, Sumitomo, and TOK photoresists.
DUV42P Anti-Reflective CoatingDUV42P is compatible with ESCAP photoresists. DUV42P utilizes a conformal design and an increased etch rate while optimizing step coverage. DUV42P is optimized to meet the requirements of the <0.10µm design rule.
DUV44 Anti-Reflective CoatingDUV44 is designed for <0.18µm design rules. DUV44 demonstrates excellent profiles with a broad range of acetal photoresists. This product provides a highly conformal, fast-etching BARC layer.
DUV52 Anti-Reflective CoatingDUV52 family is specifically designed to be compatible with ESCAP DUV photoresists and is used in the dual damascene process. Its planarizing characteristics ensure better control of resist thickness over steps to minimize reflective notching and improve CD control.
DUV54 Anti-Reflective CoatingDUV54 was designed for use in dual damascene processes and is compatible with acetal DUV photoresists. Its planarizing characteristics ensure the ability to acheive better control of resist thickness over steps to minimize reflective notching and improve CD control.
DUV64 Anti-Reflective CoatingDUV64 is a member of the latest generation of anti-reflective coatings. DUV64 demonstrates superior optical properties and coating qualities that allow it to be applied as considerably thinner coatings than previous series materials. The advanced capability of this BARC enables faster throughput time, with a demonstrated etch rate of over two times faster than traditional BARCs.
DUV112 Anti-Reflective CoatingDUV112 is the latest product in Brewer Science’s BARC product family line. This product is specifically designed for certain devices that require a BARC with very few defects. DUV112 has demonstrated extremely high resolution, broad resist compatibility, high etch rate, excellent shelf life in normal storage conditions, and processing ease.
ARC i-CON® Anti-Reflective CoatingARC i-CON® is a highly conformal product designed to address issues of coverage and over-etch. It offers a 30% faster etch rate than most advanced i-line photoresists. This series delivers exceptional optical properties through the control of substrate reflectivity, which improves CD resolution. At 0.35µm features, the series produces excellent profiles and has demonstrated feature sizes of 0.25µm with PFI-88.
WiDE®-B Anti-Reflective CoatingWiDE-B is specifically designed for wet patterning, which eliminates the need for a substrate adhesion promoter and separate BARC etch. The extended bake latitude and advanced optical characteristics allow the wet-patterning process to achieve 0.35-0.40µm patterns. WiDE is especially useful as a platform for a separation layer that serves as a lift-off application in devices such as surface acoustic wave guides (SAWs).
XHRiC Anti-Reflective CoatingXHRiC is a highly robust product line specifically designed for advanced i-line dry-patterning processes. This optical design, with an n value of 1.84 and a k value of 0.34, exhibits excellent absorbance. These products have been employed in poly, gate, and metallization levels for 0.30-0.35µm design rule devices. With continuous improvements in lithography technologies, 0.25µm feature sizes have been resolved.
XLT-B Anti-Reflective CoatingXLT-B is the primary g-line and i-line wet-patterning product that utilizes its increased absorbance in order to extend patterning processes into the sub-micron region.
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