In the fabrication of integrated circuits, the creation of electrical contact occurs once the transitor is complete. A layer of insulating oxide or other dielectric materials is applied to the wafer. Brewer Science ARCŪ material is now applied on top of the insulator material to aid critical dimension control. Then the photoresist layer is applied and processed to provide etchable areas in the exposed oxide layer. Once etch is complete the contact holes are filled with metal, thereby establishing the means for electrical contact.
The role of Brewer Science antireflective coatings use at contact is to provide the photolithographer with a non-reflective, light absorbing substrate. This layer is needed to reduce standing-waves, reduce reflective notching and for critical dimension control without requiring the special etch needed if one were to use an inorganic BARC material instead of a Brewer Science organic spin-on ARC material.
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1. The gate structure prior to conatct formation.
2. The ARC layer is applied prior to the photoresist layer.
3. After exposure and development of the photoresist layer, the resulting photoresist feature is transferred into the ARC layer by reactive ion etching (RIE).
4. The resulting ARC/Photoresist etch mask is then transferred into the oxide layer by RIE to form the contact structures.
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The interconnect fabrication with the ARCŪ layer under the photoresist. |
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Depending on your wavelength and photoresist compatibility, here are the suggested BARC products:
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