Via Fill in the Dual Damascene application is critical to the correct formation of the trench.
The ARCŪ layer provides the needed reflectivity control to form the pattern of the lines and spaces required at this critical layer. As depicted in the diagram below, there are many benefits for your photolithography process when you use a full fill via ARC material in your dual damascence process:
1.Minimizing the impact of hardmask on low-K materials by requiring only one hardmask.
2. Photoresist thickness variation is minimized with the use of ARC materials. The benefit for your process is better CD control/etch control.
3. The use of ARC products minimizes iso/dense fill vias.
4. ARC materials have excellent top coverage.
5. During the photoresist etch step, ARC materials give you the added benefit of acting as an etch block that protects the substrate.
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1.Photoresist fills vias, leaving severe iso/dense bias.
2. Using a partial fill of ARC material creates photoresist iso/dense bias.
3. Using a full via fill ARC material method creates a virtually featureless topography for the photoresist. Therefore, minimizes swing effect.
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Depending on your wavelength and photoresist compatibility, here are the suggested BARC products for use in your via fill or dual damascene applications:
Would you like more information about thess products? Please click here to access our request form or call +573.364.0300 (U.S.A.) and request an ARCŪ products technical expert.
