Ion implantation is used to create electrically active areas in the integrated circuit (IC). Ion Implantation introduces dopants as ions, at high energies, into the surface of the wafer. The ion implants form the "n" or the "p" areas on the wafer surface, depending on which dopant ion is used.
The ARC® layer properties aid the ion implant application by increased CD control by absorbing and controlling the reflectived light during photoresist exposure.
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1.An epitaxy wafer is coated with an ARC layer prior to the photoresist application.
2. The photoresist is exposed, developed and the resulting photoresist feature is then transferred into the ARC layer to create an open area in the P-epitaxy layer. The open areas are then subjected to the ion implantaiton process.
3. After implantation the photoresist and ARC layer are removed, leaving the doped area. |
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Depending on your wavelength and photoresist compatibility, here is a list of possible BARC products that could prove to be your solution:
365nm | 436nm |
Would you like more information about thess products? Please click here to access our request form or call +573.364.0300 (U.S.A.) and request an ARC® products technical expert.
