STI

Shallow-Trench Isolation (STI) Application

The STI structure provides electrical isolation between devices in integrated ciruits. A trench is etched out of the Nitride substrate and then overfilled with oxide and then flattened using chemical-mechanical planarization

An ARC® layer is required in the photolithography step to eliminate standing waves by providing the substrate with a more planar surface, The ARC® layer is spun-on within the same equipment as the photoresist.

1. After a thin pad of Oxide layer is deposited over the N Well and P Well, the ARC® layer and Photoresist layer are spun on in preparation for the lithography process.

2. After exposure, the ARC® layer and Photoresist create the etch protection needed to form the STI during Reactive Ion Etching (RIE).

3. The RIE is selective to Oxide. Then the Photoresist and ARC® layer are removed.

Depending on your wavelength and photoresist compatibility, here are suggested BARC products for the STI application:

193nm	248nm	365nm
ARC®29A	DUV42P	ARC®i-CON
ARC®82A	DUV44
	DUV52
	DUV54
	DUV64
	DUV112

Would you like more information about thess products? Please click here to access our request form or call +573.364.0300 (U.S.A.) and request an ARC® products technical expert.