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1.The ARCŪ layer and photoresist are applied to the Metal 1 substrate.
2. The photoresist is exposed and developed. The resulting photoresist feature is then transferred into the ARCŪ layer by reactive ion etching (RIE) to form the Metal 1 etch mask.
3. The Metal 1 is RIE etched down to the BPSG layer and the W plugs to make contact with the gates and source/drain.
4. The photoresist and ARCŪ layers are removed and the substrate is ready for the liner and seed deposition. The liner is typically TaN and Ta. This is followed by the deposition of a thin Cu seed layer. |
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