Brewer Science, Inc.: Via Printing

To form vias in the Metal 1 dielectric layer an ARC layer and photoresist are applied to create an etch mask.

The ARC layer provides the needed reflectivity control to form the pattern of the lines and spaces required at this critical layer.

1.The ARC layer and photoresist are applied to the Metal 1 substrate.

2. The photoresist is exposed and developed. The resulting photoresist feature is then transferred into the ARC layer by reactive ion etching (RIE) to form the Metal 1 etch mask.

3. The Metal 1 is etched by reactive ion etching down to the BPSG layer and the W plugs to make contact with the gates and source/drain.

4. The photoresist and ARC layers are removed and the substrate is ready for the liner and seed deposition. The liner is typically TaN and Ta. This is followed by the deposition of a thin Cu seed layer.

Depending on your wavelength and photoresist compatibility, here are the suggested BARC products:

193nm	248nm
ARC®29A	DUV52
ARC®82A	DUV54
	DUV112

Would you like more information about thess products? Please click here to access our request form or call +573.364.0300 (U.S.A.) and request an ARC® products technical expert.

Via Printing

Via Printing Application