![]() Photo: Example of CVD topography, post CMP, built into the device |
Inorganic CVD BARCs limit your process window by the diminished focus latitude caused by the sub-structure topography.
![]() Click image to enlarge |
At the ≤90nm node the lithographer can increase the process window by using a sacrificial layer of spin-on organic ARCŪ products as evidenced by the following graphs:
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As you can see in expanded section of the simulation graph to the left:
The CVD BARC "SiON" (black line) in the nominal 90nm range has between a 6 to 10nm shift for a 20nm photoresist thickness change.
The organic spin-on ARCŪ product (red line) has between a 1 to 5nm shift for a 30nm photoresist thickness change.
And the combination of SiON & ARCŪ product (orange line) has between a 2 to 7nm shift for a 30nm photoresist thickness change.
The benefit of the reduced swing curve obtained by using our spin-on organic ARCŪ products:
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As you can see in the simulated reflectivity graph, our organic spin-on ARCŪ products easily provide 0% reflectivity, whereas no matter the thickness, SiON never reaches 0% reflectivity.
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What does 0% reflectivity mean to my process window? As an example of how substrate reflectivity relates to the overall critical dimension of the device please examine the CPK chart to the right.
The goal of incorporating spin-on organic ARCŪ products into your process is to manufacture stable critical dimension as simulated in the CPK Projections graph.
Why are Brewer Science's Organic ARCŪ products superior to the competition?
ARCŪ products are sacrificial spin-on coatings that provide reflectivity control during photoresist exposure, resulting in reduced CD swing and wider process window. Brewer Science ARCŪ products facilitate not only efficient photolithography and enable easy etch integration, each product is backed by superior technical support and service.
To review information about individual ARCŪ products please visit the linked web pages found within the Brewer Science website.