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A well designed hotplate insures uniform
baking across the substrate.
Since the substrate intimately contacts a surface of a known
constant
temperature, it heats at a rate dependent only on the bake
style
selected and the thermal properties of the substrate.
Increased throughput results from a
faster warmup of the substrate. Bake times will be
measured in seconds, rather than minutes or hours, as in conventional
ovens.
Reduced vulnerability to particulate
contamination is a major advantage of hotplate baking.
Only conditioned ambient clean room air passes over the substrate.
Three bake styles exist on the Cee®
Hot Plates: proximity bake, soft contact bake and hard
contact bake. These may be used in combination to further
refine your baking process. The
following section will discuss these methods and the advantages
of each.
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PROXIMITY BAKE
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HARD-CONTACT BAKE
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SOFT-CONTACT BAKE
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In this method,
substrates float on a pillow of nitrogen that is
blown through orifices in the chuck surface. A combination
of heated gas and radiant heat from the chuck heats
the substrate. This slower heating of the substrate
reduces blistering and cracking of films incorporating
fast-drying solvents.
Commonly used
as a pre-bake stage and / or in combination with
the hard-contact bake, the proximity bake makes
two temperature bake schedules obsolete.
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Hard-contact
bake represents the most accurate baking method
for hotplates. Vacuum ports in the chuck hold the
substrate securely in place. This method insures
bake uniformity and minimizes bowing and warping
of the substrate.
A quicker
warm-up and more efficient heating produces faster
throughput in shorter bake times. Selecting the
"VAC" (vacuum bake) method initiates the
hard-contact bake cycle-the preferred bake method.
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In this method,
gravity alone holds the substrate against the surface
of the chuck. While this represents the least accurate
bake style, this method finds some use as an intermediate
style, between the hard-contact and the proximity
bakes, as a multiple step warm-up.
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Cee® Hot Plates virtually eliminate
the skin effect with thick films and substantially increase
throughput. The chart below presents process examples for
two commonly used resins:
positive photoresist and polyimide. These figures should not
be use as a rigid guideline,
since the best method with a particular baking application
can only be achieved through
experimentation.

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APPLICATION
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OVEN BAKE
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HOTPLATE BAKE
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Positive Photo Resist
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90°C - 30 minutes
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115°C - 30 secs w/Hard Contact bake
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Polyimide alpha (solvent removal)
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90°C - 30 minutes
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150°C - 15 secs w/Proximity bake
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Polyimide beta (partial imidization)
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135°C - 30 minutes
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150°C - 90 secs w/Hard Contact bake
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Segments
and pieces of GaAs wafers are commonly used in research
and pilot lines for economic reasons. The Cee® Hot
Plates are ideally suited for these circumstances as
all Cee® Hot Plates offer the proximity bake mode.
This is most useful for prewarming GaAs wafers before
going to a hard-contact bake and insures uniform heating
without thermal shock. Typical bake processes are identical
to those provided above, for silicon substrates.
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Reproducibility
and throughput are key issues both for photomasks and
for display makers. Because of the large thermal mass
of these substrates, oven baking is slow and non-uniform.
A proximity bake eliminates back side defects. The Cee®
Hot Plate typically reduces bake times by 90%.
Reproducibility
is greatly improved since the rate of heating is not
dependent on batch size. All substrates are baked individually.
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The design of
the Cee® exhaust cover promotes the dissipation of vapors
removed from a substrate
placed on the chuck, without actually drawing air across the
chuck surface.

Hotplate baking heats the substrate
and the solder without applying heat directly to the
devices on the board. Using a combination of proximity and
hard-contact bakes, the bake
profile can be adjusted to suit any process.

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