ProTEK^® thin films are spin-applied polymeric coating systems that provides blanket protection from concentrated acids or bases. ProTEK^® coating systems are designed to offer temporary wet etch protection for CMOS-MEMS circuitry during alkaline or acid etches.

ProTEK^® A1 materials provide protection from hot (150°C) Phosphoric Acid that is used to remove silicon nitride films. It also provides protection from mixed acids during wafer thinning processes.

ProTEK^® A2 materials provide protection for the substrate from either hydrofluoric acid (49% HF) or buffered oxide etchant (BOE) etch solutions.

ProTEK^® B materials offer protection from alkaline solutions such as KOH and TMAH for extended bath etches.

Typical applications for the use of ProTEK^® coatings are front-side substrate protection during:

• Backside etch-stop removal
• V-groove etch process
  
• Backside hardmask removal
• Wafer thinning

The ProTEK^® A1 coating system is comprised of:

1. ProTEK^® A1 film
2. ProTEK^® Remover 100

The ProTEK^® A2 coating system is comprised of:

1. ProTEK^® A2 film
2. ProTEK^® Remover 200

The ProTEK® B coating system is comprised of:

1. ProTEK^® Primer
2. ProTEK^® B film
3. ProTEK^® Remover 100

A combination of these ProTEK^® films can be stacked in sequences to provide protection for multiple baths of alkaline and acidic solutions.

ProTEK^® coatings can be removed with the easy-to-use ProTEK® Remover (for wet chemistries) or by dry etch.

ProTEK^® A2 material is designed for use as a blanket wet etch protectant only. i-Line microlithography patterning will be available with the next generation.