ProTEK® thin films are spin-applied polymeric coating systems that provides blanket protection from concentrated acids or bases. ProTEK® coating systems are designed to offer temporary wet etch protection for CMOS-MEMS circuitry during alkaline or acid etches.
ProTEK® A1 materials provide protection from hot (150°C) Phosphoric Acid that is used to remove silicon nitride films. It also provides protection from mixed acids during wafer thinning processes.
ProTEK® A2 materials provide protection for the substrate from either hydrofluoric acid (49% HF) or buffered oxide etchant (BOE) etch solutions.
ProTEK® B materials offer protection from alkaline solutions such as KOH and TMAH for extended bath etches.
Typical applications for the use of ProTEK® coatings are front-side substrate protection during:
- Backside etch-stop removal
- V-groove etch process
- Backside hardmask removal
- Wafer thinning
The ProTEK® A1 coating system is comprised of:
- ProTEK® A1 film
- ProTEK® Remover 100
The ProTEK® A2 coating system is comprised of:
- ProTEK® A2 film
- ProTEK® Remover 200
The ProTEK® B coating system is comprised of:
- ProTEK® Primer
- ProTEK® B film
- ProTEK® Remover 100
A combination of these ProTEK® films can be stacked in sequences to provide protection for multiple baths of alkaline and acidic solutions.
ProTEK® coatings can be removed with the easy-to-use ProTEK® Remover (for wet chemistries) or by dry etch.
ProTEK® A2 material is designed for use as a blanket wet etch protectant only. i-Line microlithography patterning will be available with the next generation.
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