Process challenges during CVD oxide deposition on the backside of 20-µm thin 300-mm wafers temporarily bonded to glass carriers

Figure 1. Schematic of the process flow. The wafer thinning starts by edge trimming the wafer followed by coating the release layer, BrewerBOND® T1107 material. After bonding with the temporary bonding material (TBM), BrewerBOND® C1301-50 material, the wafers are ground down to 55 µm and chemical mechanical polished (CMP) to smooth the surface. Further thinning is achieved via a wet etch step. After oxide and dielectric deposition, several wafers are transferred to a new carrier using a wafer flip step in which the original stack is bonded to a second carrier enabling debond of the first carrier.

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