Orlando, Florida
Brewer Science will be exhibiting at booth #511 at ECTC in Orlando, Florida on May 26 – 29, 2026.
Event Details
The 2026 IEEE 76th Electronic Components and Technology Conference
May 26 – 29, 2026
JW Marriott & The Ritz-Carlton Grande Lakes – Orlando, Florida
Brewer Science is at Booth 511
Brewer Science is a Gold Sponsor of ECTC.
Presentation Details:
Special Session 8: Innovative Materials for Advanced Packaging – Materials for Packaging, Integration, and Performance
Rama Puliggadda, CTO of Brewer Science, Panelist
Tuesday, May 26 3:30 PM | Palazzo E | Special Sessions
This special session covers a wide range of topics from polyimide/EMC to build-up materials, hybrid-bonding dielectrics, exotic materials, adhesion and stress buffer layers, and interconnect materials (electroless, UBM, solder). The discussion will be to define “the necessity” and the “must” factor to introduce new innovative materials to improve performance, to address current node shortcomings, or to reduce cost. This special session will review new materials for different areas of advanced packaging from substrates, to RDL, to interposers, to chiplets, and the integration thereof.
Thin Cleanable Organic Laser Release Layer With Ultralow Laser Transmittance Below 360 nm Wavelength for TBDB
Presented by Dr. Hanlin Chen
Thursday, May 28 | 4:05 PM | Tuscany D | Session 21
Abstract:
Temporary bonding/debonding (TBDB) technology has become a foundational process module that maintains device wafer or reconstituted molded wafer planarity and geometry through thinning, multilayer redistribution layer (RDL) build-up, plating, molding, and wet processing. This capability is increasingly critical as fan-out scales toward large-area and panel-level formats where warpage limits overlay, yield, and assembly robustness. Laser release layers (LRLs) enable low-stress, energy-triggered carrier separation, improving controllability for ultrathin and fragile structures and broadening TBDB process windows under harsh thermal and chemical processes. However, the primary constraints are now shifting towards post-debond cleanliness and optical selectivity at common UV debond wavelengths. If LRL absorption is insufficient, higher fluence would be required and the risk of residue, particles, carbonization, incomplete release, or device-side damage would increase. In this paper, we introduce a cleanable, particle-free organic LRL with strong UV absorption (extinction coefficient (k) up to 0.25 below 360 nm wavelength), where a 600-nm film provides <1% transmittance and enables debonding with low dose. Residue is removable with γ-butyrolactone (GBL) and cyclopentanone (CPO) to reduce contamination and support carrier reuse. We further report optical, thermal, and chemical characterization and a TBDB laser-release demonstration.
Hierarchical Multi-Layer and Stacking Vias with Novel Structure by Transferable Cu/Polymer Hybrid Bonding for High-Speed Digital Applications
Co-presented by Chung-An (Andrew) Tan with ITRI
Thursday, May 28 | 10 AM | Mediterranean Hallway | Interactive Presentations
Abstract:
Heterogeneous integration and hybrid bonding are core advanced packaging technologies with several applications, including 5G, wearable devices, AI, and high-speed digital applications. Tremendous development in AI applications, machine learning, and high-speed digital applications requires fast data acquisition. For such requirements with numerous functional applications and high-speed interconnections, new novel designs, as well as 3D-vertical stacking of advanced packages, are essential for multi-layer stacking to provide higher transmission speeds, higher I/O, and lower return loss for advanced packaging with high-speed digital applications.
In this work, we disclose a novel, unique, 3D-vertical stacking structure with hierarchical multi-layer stacking vias, 3D-vertical stacking of through-molding via (TMV) by vertical wiring, as well as transferred hybrid bonding, designed and fabricated for tailored AI and high-speed digital applications. This novel 3D-vertical stacking with hierarchical structure with transferred Cu/polymer hybrid bonding beneath, sequential process of distinctive dielectric tailored materials with low Dk and Df of material from Brewer Science with several stacking vias and Cu RDLs were processed for build-up and 3D-vertical stacking of TMV with vertical wiring and molding process. Combined with nanocrystalline Cu (nc-Cu)/polymer layering by damascene process with lithography and CMP process, electric connectivity tailored for high-speed digital applications can be achieved. In view of our previous study, nanocrystalline copper (nc-Cu) and polymer have been successfully hybrid bonded at the low temperature of 150°C on-wafer process, forming stacking vias and multi-layer stacking. Moreover, we have successfully conducted 3D-vertical stacking with transferred hybrid bonding, in which vertical wire and hybrid bond can be conducted for layers of stacking. After processing of transferred hybrid bonding and 3D vertical wire stacking, a molding process was conducted to form hierarchical multi-layer structures. Finally, die bonding was conducted for high-speed digital applications.
Metal pads are initially processed on a wafer level and sequentially coated with photosensitive dielectric material. Upon exposure by a stepper, the polymeric material was patterned with a critical dimension of 5 µm. Subsequently, repeating steps of multi-layer stacking vias and interconnections of RDLs were performed for electric connections. The photopatternable polymeric material was patterned and filled with nc-Cu with an average grain size of 80-100 nm. The polymer and nc-Cu hybrid structure was planarized via CMP with well-controlled roughness and dishing of 1 nm. The post-CMP wafers were further processed with transferred hybrid bonding. After bonding, the nc-Cu/polymer hybrid structure was bonded successfully with a significantly reduced bonding temperature of 150°C. After multi-layer stacking, the vertical wire was formed by wire bonding for 3D-vertical stacking. Subsequently, the post-bonding wafer with 3D-vertical stacking were further die bonded with several layers, and the carrier was removed. Finally, the molding and grinding processes were applied for final processing.
Interconnection of electronic characteristics are also analyzed by both kelvin structure and daisy chain for electric characteristics, and propagation loss and return loss with a digital frequency of 50 MHz were further analyzed. Electrical migration was also analyzed. In summary, this 3D-vertical stacking with hierarchical multi-layer and stacking vias with novel structure was demonstrated for high-speed digital applications and AI packaging technology.