AVS International Symposium & Exhibition

October 29-November 2, 2017

October 29-November 2, 2017
Tampa, FL

Don’t miss our presentation

Materials and Methods for Bottom-Up Semiconductor Device Manufacturing by Selective Surface Modification, Reuben Chacko, J. Lowes, J. Dai, S. Brown, D. Sweat, Brewer Science, Inc. 2D Materials Poster Session, November 2, 2017, 6:30 PM

Abstract: In order to extend Moore’s Law, device makers are looking at bottom-up approaches as an alternative for semiconductor device manufacturing. Recently, the variation in photoresist component distribution that is seen when scaling to sub-20-nm features has highlighted the need for very controlled and uniform distribution of materials. Bottom-up approaches to lithography patterning are able to address these stochastic issues, along with also addressing pattern roughness, excessive lithography steps, and others. We present novel materials and processes that enable selective surface modification with semiconductor device manufacturing as the end application. These materials are able to selectively deposit on various substrates, such as oxides, nitrides, metals, or even organic films. Properties such as selective deposition, catalysis, selective handles for further modification, ALD modifiers, and etch modifiers are reported.

About AVS 2017:
The AVS International Symposium and Exhibition addresses cutting-edge issues associated with materials, processing, and interfaces in the research and manufacturing communities. The weeklong Symposium fosters a multidisciplinary environment that cuts across traditional boundaries between disciplines, featuring papers from AVS technical divisions, technology groups, and focus topics on emerging technologies.

For more information: https://www.avs.org/Symposium/