WaferBOND® HT-10.11 and HT-10.12 Materials

Temporary Bonding Materials
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WaferBOND® HT-10.11 and HT-10.12 Materials

WaferBOND® HT-10.11 and HT-10.12 temporary bonding materials enable back-end-of-line (BEOL) processing of ultrathin wafers with standard semiconductor equipment.

WaferBOND® HT-10.11 and HT-10.12 materials are organic coatings developed for temporary wafer bonding solutions for MEMS and 3-D wafer-level packaging applications. WaferBOND® HT-10.11 material enables effective bonding and support through substrate thinning and backside standard lithographic processing through utilization of effective bonding and subsequent thermal slide, chemical*, mechanical**, or laser** debonding for thickness < 75 μm. WaferBOND® HT-10.12 material enables thermal slide debonding for film thickness ≥ 75 μm. These materials were specifically developed for thin wafer handling (TWH), through-silicon via (TSV) reveal, and redistribution layer (RDL) creation or processes up to 250°C.

*Chemical release debond method requires a perforated carrier wafer or small die size if releasing after dicing

**Mechanical and laser debond methods require a compatible release material

Wax Replacement

WaferBOND® HT-10.11 and HT-10.12 materials are organic coatings that enable back-end-of-line (BEOL) processing of ultrathin wafers using standard semiconductor equipment. These material are a great option as an alternative solution to typical wax adhesives. WaferBOND® HT-10.11 and HT-10.12 materials offer significant advantages because they can be applied with a one-coat process, improve throughput, simplify cleaning, and shorten processing time.

Properties Wax WaferBOND® HT-10.11 or HT-10.12 Material
Thickness Range ~ 10 – 35 µm 20 µm – 130 µm
Coating Throughput Requires multiple coats Single-coat process
Bonding Temperature Range 95°C – 110°C 130°C – 180°C
Debonding Temperature Range 95°C  – 110°C 150°C – 200°C
Thermal Stability Temperature Range < 120°C ≤ 250°C

Benefits

Debond Methods

WaferBOND® HT-10.11 material is compatible with the following debond methods:

With these WaferBOND® materials, you can:

  • Process ultrathin wafers in temperatures up to 250°C
  • Protect the wafer edge from chipping
  • Protect circuitry from harsh chemical etchants
  • Provide a void-free interface for a smooth surface on the final thinned wafer

WaferBOND® HT-10.11 and HT-10.12 Material Spin Speed Curves:
HT-10.11 and HT-10.12 Spin Speed Curves Graph

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WaferBOND® HT-10.11 and HT-10.12 Materials

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