WaferBOND® HT-10.11 and HT-10.12 Materials

WaferBOND^® HT-10.11 and HT-10.12 Materials

WaferBOND^® HT-10.11 and HT-10.12 temporary bonding materials enable back-end-of-line (BEOL) processing of ultrathin wafers with standard semiconductor equipment.

WaferBOND^® HT-10.11 and HT-10.12 materials are organic coatings developed for temporary wafer bonding solutions for MEMS and 3-D wafer-level packaging applications. WaferBOND^® HT-10.11 material enables effective bonding and support through substrate thinning and backside standard lithographic processing through utilization of effective bonding and subsequent thermal slide, chemical*, mechanical**, or laser** debonding for thickness < 75 μm. WaferBOND^® HT-10.12 material enables thermal slide debonding for film thickness ≥ 75 μm. These materials were specifically developed for thin wafer handling (TWH), through-silicon via (TSV) reveal, and redistribution layer (RDL) creation or processes up to 250°C.

*Chemical release debond method requires a perforated carrier wafer or small die size if releasing after dicing

**Mechanical and laser debond methods require a compatible release material

Wax Replacement

WaferBOND^® HT-10.11 and HT-10.12 materials are organic coatings that enable back-end-of-line (BEOL) processing of ultrathin wafers using standard semiconductor equipment. These material are a great option as an alternative solution to typical wax adhesives. WaferBOND^® HT-10.11 and HT-10.12 materials offer significant advantages because they can be applied with a one-coat process, improve throughput, simplify cleaning, and shorten processing time.

Properties	Wax	WaferBOND^® HT-10.11 or HT-10.12 Material
Thickness Range	~ 10 – 35 µm	20 µm – 130 µm
Coating Throughput	Requires multiple coats	Single-coat process
Bonding Temperature Range	95°C – 110°C	130°C – 180°C
Debonding Temperature Range	95°C – 110°C	150°C – 200°C
Thermal Stability Temperature Range	< 120°C	≤ 250°C

Thermal Slide Debonding
Learn About Wax Replacement

Benefits

Enables ultrathin wafer processing utilizing standard BEOL techniques and tooling
Assists in creation of interconnects (RDL layers) after thinning
Protect devices from chemical degradation and physical breakage
Adhesive materials can be completely removed from device wafer without damage
Can be utilized with various debond methods (chemical release, thermal slide, mechanical, or laser)

With these WaferBOND^® materials, you can:

Process ultrathin wafers in temperatures up to 250°C
Protect the wafer edge from chipping
Protect circuitry from harsh chemical etchants
Provide a void-free interface for a smooth surface on the final thinned wafer

WaferBOND^® HT-10.11 and HT-10.12 Material Spin Speed Curves:
HT-10.11 and HT-10.12 Spin Speed Curves Graph

WaferBOND^® HT-10.11 and HT-10.12 Materials