WaferBOND® HT-10.11 and HT-10.12 temporary bonding materials enable back-end-of-line (BEOL) processing of ultrathin wafers with standard semiconductor equipment.
WaferBOND® HT-10.11 and HT-10.12 materials are organic coatings developed for temporary wafer bonding solutions for MEMS and 3-D wafer-level packaging applications. WaferBOND® HT-10.11 material enables effective bonding and support through substrate thinning and backside standard lithographic processing through utilization of effective bonding and subsequent thermal slide, chemical*, mechanical**, or laser** debonding for thickness < 75 μm. WaferBOND® HT-10.12 material enables thermal slide debonding for film thickness ≥ 75 μm. These materials were specifically developed for thin wafer handling (TWH), through-silicon via (TSV) reveal, and redistribution layer (RDL) creation or processes up to 250°C.
*Chemical release debond method requires a perforated carrier wafer or small die size if releasing after dicing
**Mechanical and laser debond methods require a compatible release material
WaferBOND® HT-10.11 and HT-10.12 materials are organic coatings that enable back-end-of-line (BEOL) processing of ultrathin wafers using standard semiconductor equipment. These material are a great option as an alternative solution to typical wax adhesives. WaferBOND® HT-10.11 and HT-10.12 materials offer significant advantages because they can be applied with a one-coat process, improve throughput, simplify cleaning, and shorten processing time.
|Properties||Wax||WaferBOND® HT-10.11 or HT-10.12 Material|
|Thickness Range||~ 10 – 35 µm||20 µm – 130 µm|
|Coating Throughput||Requires multiple coats||Single-coat process|
|Bonding Temperature Range||95°C – 110°C||130°C – 180°C|
|Debonding Temperature Range||95°C – 110°C||150°C – 200°C|
|Thermal Stability Temperature Range||< 120°C||≤ 250°C|
WaferBOND® HT-10.11 material is compatible with the following debond methods:
WaferBOND® HT-10.11 and HT-10.12 Material Spin Speed Curves:
WaferBOND® HT-10.11 and HT-10.12 Materials