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Protecting front-side circuitry during backside DRIE processing

The demand for microelectromechanical systems (MEMS) requiring tall structure designs, as well as the increased density and performance expectations from the IC industry, are driving the need to utilize deep reactive ion etching (DRIE) in creating deep anisotropic etches of silicon for MEMS and semiconductor device applications. Vast yield hits are frequently the outcome of…

  CMOS, Lithography, scratch-resistant, DRIE, MEMS, etching Click Here to Read More
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